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APTM120H140FT1G
Full - Bridge MOSFET Power Module
3 Q1 4 Q3 2 6 Q2 7 1 Q4 9
VDSS = 1200V RDSon = 1.4 typ @ Tj = 25C ID = 8A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 8TM Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * * * * * *
5
8 NTC
10
11
12
Pins 3/4 must be shorted together
*
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1200 8 6 50 30 1.68 208 7 Unit V A V W A
December, 2007 1-5 APTM120H140FT1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120H140FT1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 1200V VGS = 0V Tj = 125C VGS = 10V, ID = 7A VGS = VDS, ID = 1mA VGS = 30 V Min Typ Max 250 1000 1.68 5 100 Unit A V nA
3
1.4 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 7A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 7A RG = 4.7 Min Typ 3812 350 44 145 24 70 26 15 85 24 ns nC Max Unit pF
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 7A Tj = 25C IS = - 7A VR = 100V diS/dt = 100A/s Tj = 125C Tj = 25C Tj = 125C 1.12 3.03 Min Typ Max 8 6 1 25 250 520 Unit A V V/ns ns C
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 7A di/dt 1000A/s VDD 800V Tj 125C
December, 2007
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APTM120H140FT1G - Rev 0
APTM120H140FT1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.6 150 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTM120H140FT1G - Rev 0
December, 2007
APTM120H140FT1G
Typical Performance Curve
Low Voltage Output Characteristics 20
VGS=10V
Low Voltage Output Characteristics 12
TJ=125C
ID, Drain Current (A)
15
TJ=25C
ID, Drain Current (A)
10 8 6 4
VGS=6, 7, 8 &9V
10
TJ=125C
5V
5
4.5V
2 0
0 0 5 10 15 20 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature 3 ID, Drain Current (A) 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=7A
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V) Transfert Characteristics
RDSon, Drain to Source ON resistance
10 8 6 4 2 0 0
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
TJ=125C
TJ=25C
1
2
3
4
5
6
TJ, Junction Temperature (C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 10 8 6 4 2 0 0 40 80 120 160 Gate Charge (nC)
VDS=960V ID=7A TJ=25C
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000
Ciss
VDS=240V VDS=600V
C, Capacitance (pF)
1000
Coss
100
Crss
0
50
100
150
200
VDS, Drain to Source Voltage (V)
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4-5
APTM120H140FT1G - Rev 0
December, 2007
10
APTM120H140FT1G
Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 25 20 15 10 5
TJ=25C
TJ=125C
0 0 0.2 0.4 0.6 0.8 1 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7
Thermal Impedance (C/W)
0.6 0.5 0.4
0.9 0.7 0.5
0.3 0.2 0.1
0.3 0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTM120H140FT1G - Rev 0
December, 2007

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